Measurements of the electron density in n-type a-Si: H
- 27 September 1984
- journal article
- letter
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 50 (3) , L19-L22
- https://doi.org/10.1080/13642818408238852
Abstract
The density of band tail electrons in n-type a-Si: H, at doping levels between 10−3 and 10−6 PH3, has been measured using a transient-voltage technique on layered samples. At a doping level of 10−3 PH3 a density of 8 × 1016 cm−3 is found which agrees well with ESR data. The results confirm that occupied band-tail states account for only a small fraction of the dopant electrons.Keywords
This publication has 10 references indexed in Scilit:
- Direct spectroscopic determination of the distribution of occupied gap states in a-Si:HJournal of Non-Crystalline Solids, 1983
- Conduction in a-Si:H studied by traveling wave techniqueJournal of Non-Crystalline Solids, 1983
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Measurements of depletion layers in hydrogenated amorphous siliconPhysical Review B, 1983
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Temperature dependence of ESR spectra of doped a‐Si:HPhysica Status Solidi (b), 1981
- Defect states in doped and compensated-Si: HPhysical Review B, 1981
- Electron Spin Resonance of Doped Glow‐Discharge Amorphous SiliconPhysica Status Solidi (b), 1981