Growth and Characterization of Cubic SiC Single‐Crystal Films on Si

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Abstract
Morphological and electrical characterization results are presented for cubic films grown by chemical vapor deposition on single‐crystal Si substrates. The films, up to 40 μm thick, were characterized by optical microscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room temperature electron mobilities up to 520 cm2/V‐s (at an electron carrier concentration of ) were measured. Finally, a number of parameters believed to be important in the growth process were investigated and some discussion is given of their possible effects on the film characteristics.

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