Integrated data conversion for the electron beam exposure system EX-7

Publisher Website
Google Scholar
Abstract
Because pattern data operations for electron beam (EB) lithography requires the knowledge of shape‐to‐shape correlation with adjacent patterns, the hierarchical structure embedded with the input data is usually expanded. Consequently, drastic increase in both the processing time and data amount has resulted. To overcome this problem a novel data conversion technique has been developed. It can exploit the hierarchical structure and repetitiveness originally incorporated into large‐scale integrated designs to efficiently generate EB pattern data. The conversion technique was implemented on a large‐scale computer to make pattern data for the EX‐7 EB exposure system. As a result, the highest density levels of 1‐ and 4‐Mbit direct random access memories (DRAMS), scaled down to 0.5 μm, were converted within 0.5 h of central processing unit (cpu) time, achieving an average data compaction of (1)/(20) . Overlap elimination and tone reversal were performed at a speed of 108 primitive shapes per hour. The data amount increased to 40 from 17 Mbytes of uncorrected data, when the proximity effect correction was performed on the shrinked 4‐Mbit DRAM pattern using this conversion technique.

This publication has 0 references indexed in Scilit: