An Analysis of Ionizing Radiation Effects in Four-Layer Semiconductor Devices
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 16 (6) , 104-110
- https://doi.org/10.1109/TNS.1969.4325511
Abstract
The switching of a four-layer semiconductor device in an ionizing radiation environment is calculated by solving the charge transport equations to determine the motion of the electron and hole distributions and the changes in the electric field distribution throughout a one-dimensional device as a function of time. A discussion of the characteristic device turn-on as a function of the ionizing radiation exposure and external circuit and device parameters is presented. In addition to showing the detailed calculated device behavior, the theoretical and experimental results are compared.Keywords
This publication has 2 references indexed in Scilit:
- The Analysis of Radiation Effects in Semiconductor Junction DevicesIEEE Transactions on Nuclear Science, 1967
- SCR Switching with Ionizing RadiationIEEE Transactions on Nuclear Science, 1967