Bipolar transistor with minimized collector-to-base junction area

1 June 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (6) , 723-726
https://doi.org/10.1109/t-ed.1983.21200

Abstract

A novel n-p-n bipolar transistor structure with polysilicon base contacts and minimized collector-to-base junction area is described. Device data obtained for this structure show that while device parameters dependent on the device doping profile remain unaffected, a considerable improvement is obtained in device parameters dependent on the size of the collector-to-base junction area.

Keywords

BIPOLAR TRANSISTORS
BORON
FABRICATION
NONLINEAR EQUATIONS
BIPOLAR TRANSISTOR
ELECTRON DEVICES
VERY LARGE SCALE INTEGRATION
IMPURITIES
ITERATIVE METHODS
OXIDATION

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