Geometric structure of the Si(111)√3×√3-Ga surface
- 15 February 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (5) , 2704-2706
- https://doi.org/10.1103/physrevb.37.2704
Abstract
The structure of the Si(111)√3 × √3 -Ga surface has been studied by dynamic analysis of low-energy electron-diffraction curves of intensity versus energy (I-V). It has been found that a structure in which Ga atoms are located on the second layer of Si atoms well explains the experimentally obtained I-V curves. In this geometry, a large deformation of the surface layer results from the stable adsorption of Ga atoms. The optimum configuration is close to that proposed by Northrup in his study of the Si(111)√3 × √3 -Al surface.Keywords
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