Preparation of (La1-xCex)B6 single crystals by the floating zone method
- 2 January 1991
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (1-2) , 425-428
- https://doi.org/10.1016/0022-0248(91)90391-h
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Effect of W doping on the growth of TiC crystal by the floating zone methodJournal of Crystal Growth, 1988
- Subgrains in LaB6 crystals grown with a xenon arc image furnaceJournal of Crystal Growth, 1987
- Dislocation-free GaAs and InP crystals by isoelectronic dopingJournal of Crystal Growth, 1983
- Thermionic emission properties of hexaboridesSurface Science, 1980
- Growth of high purity LaB6 single crystals by multi-float zone passageJournal of Crystal Growth, 1975