Fabrication of low-stress silicon stencil masks for ion beam lithography
- 1 November 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (6) , 1802-1805
- https://doi.org/10.1116/1.584461
Abstract
This paper describes the fabrication of stencil masks in large area, low-stress (10 MPa), n-type silicon membranes for demagnifying (4×) ion projection lithography (IPL) and proximity printing. The projection masks have a silicon foil area 95 mm in diameter, thicknesses between 2 and 5 μm, and resolution of 0.6 μm. Proximity printing masks have a 1 cm square membrane area, 0.8 μm thickness, and 80 nm resolution. Measured distortion (3σ) in the IPL masks ranges between 0.23 and 0.65 μm, with an experimental error of 0.20 μm.This publication has 0 references indexed in Scilit: