Experiments on heat sinking of semiconductor devices
- 9 September 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (18) , 512-513
- https://doi.org/10.1049/el:19710347
Abstract
A planar GaAs structure has been used to measure the properties of good heatsinks of c.w. devices. It is found, first, that the thermal resistance is primarily given by the thermal conductivity k of GaAs if the temperature dependence of k is included, and, secondly, that the contribution of the semiconductor-metal interface is negligible.Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 1 Thermal ConductivityPublished by Elsevier ,1966