A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 220-227
- https://doi.org/10.1016/0022-0248(88)90531-3
Abstract
No abstract availableKeywords
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