Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride
- 1 September 1994
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 34 (1-4) , 177-181
- https://doi.org/10.1016/0927-0248(94)90038-8
Abstract
No abstract availableKeywords
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