VA-8 Fabrication, characterization, and modeling of inverted mode InGaAs/InP heterojunction bipolar transistors
- 1 November 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (11) , 2547
- https://doi.org/10.1109/t-ed.1985.22361
Abstract
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