Improved performance of CW silicon TRAPATT oscillators

1 May 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (5) , 845-846
https://doi.org/10.1109/proc.1970.7781

Abstract

This letter reports the first CW operation of silicon TRAPATT diodes in the microwave region. In particular, CW operation of silicon diodes, using room temperature heat sinking, has been obtained from 2.5 to 4.0 GHz. The maximum power output achieved thus far has been 3.0 watts and the maximum efficiency has been 20 percent.

Keywords

SILICON
DIODES
HEAT SINKS
TRANSIENT RESPONSE
FREQUENCY
GERMANIUM
DIFFERENCE EQUATIONS
MICROWAVE OSCILLATORS
ELECTROMAGNETIC HEATING
TEMPERATURE

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