A full three-dimensional simulation on alpha-particle induced DRAM soft-errors

1 January 1985

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 496-499
https://doi.org/10.1109/iedm.1985.191012

Abstract

Numerical device, modeling is one of the most promising VLSI device design methods developed thus for in the sub-um era. This paper describes a full three-dimensional numerical modeling of alpha-particle-induced DRAM soft-error phenomena. The three-dimensional simulation results were verified using test chip measurement in Am(241) radiation source environment. The computations agree well with experiments within 3% error whereas the two-dimensional simulation suffers from large simulation error over 70%.

Keywords

RANDOM ACCESS MEMORY
POISSON EQUATIONS
SILICON
COSTS
COMPUTATIONAL MODELING
PHYSICS
INTEGRAL EQUATIONS
CHARGE CARRIER PROCESSES
VERY LARGE SCALE INTEGRATION
NOISE MEASUREMENT

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