The bistability of the thermal donors in silicon
- 10 June 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (24) , 3458-3460
- https://doi.org/10.1063/1.115792
Abstract
The bistability of the two first thermal donors (TDs) in silicon has been studied by means of infrared (IR) spectroscopy. The two IR vibrational bands positioned at about 975 and 988 cm−1 which are due to TD1 and TD2, respectively, have been found to show bistable properties. It is shown that the low energy configurations of both TD1 and TD2 give rise to IR absorption, with a common vibrational band at about 1020 cm−1.Keywords
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