Changes in the characteristics of CuInGaSe2 solar cells under light irradiation and during recovery: degradation analysis by the feeble light measuring method
- 1 February 2002
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 42 (2) , 219-223
- https://doi.org/10.1016/s0026-2714(01)00134-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The effects of sweep rate, voltage bias and light soaking on the measurement of CIS-based solar cell characteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Behaviour of CuInGaSe 2 solar cells underlight irradiationElectronics Letters, 2000
- The Electronic effects of point defects in Cu(In x Ga 1−x )Se 2Thin Solid Films, 2000
- Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin-film solar cellsProgress In Photovoltaics, 1999
- Light-induced changes in hydrogen-diluted a-Si : H materials and solar cells: A new perspective on self-consistent analysisSolar Energy Materials and Solar Cells, 1997
- Over 30% efficient InGaP/GaAs tandem solar cellsApplied Physics Letters, 1997
- Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctionsJournal of Applied Physics, 1996
- Structural and Optical Properties of Polycrystalline Silicon Thin Films Deposited by the Plasma Enhanced Chemical Vapour Deposition MethodJapanese Journal of Applied Physics, 1996
- Temperature dependence of light-induced degradation in a-Si solar cellsSolar Cells, 1987