Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions
- 1 February 1996
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (2) , 301-304
- https://doi.org/10.1007/bf02666260
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Model and simulation of scanning tunneling microscope tip/semiconductor interactions in p n junction delineationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Methods for the measurement of two-dimensional doping profilesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Lateral dopant profiling on a 100 nm scale by scanning capacitance microscopyJournal of Vacuum Science & Technology A, 1990