Digital NMOS test circuits fabricated in silicon MBE

1 February 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (2) , 29-31
https://doi.org/10.1109/edl.1984.25821

Abstract

Integrated digital test circuits, as well as discrete NMOS devices, have been fabricated in epitaxial layers produced by silicon molecular-beam epitaxy (Si-MBE). The performance of these circuits and devices was found to be very similar to that of identical components processed in standard substrates. Unusually high low-field mobility was measured in the MBE MOSFET's.

Keywords

CIRCUIT TESTING
MOS DEVICES
SILICON
MOLECULAR BEAM EPITAXIAL GROWTH
EPITAXIAL LAYERS
SUBSTRATES
CHEMICALS
CONDUCTIVITY
HEAT TRANSFER
ION BEAMS

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