Synthesis and characterization of high purity, single phase GaN powder
- 1 September 1995
- journal article
- research article
- Published by Cambridge University Press (CUP) in Powder Diffraction
- Vol. 10 (4) , 266-268
- https://doi.org/10.1017/s0885715600014950
Abstract
Synthesis of high-purity, single-phase gallium nitride (GaN) powder has been achieved by reacting molten Ga with flowing ammonia (NH3) in a hot wall tube furnace. The optimum temperature, NH3 flow rate, and position of the boat in the hot wall tube furnace relative to the NH3 inlet for the complete reaction to pure GaN for our system were 975 °C, 400 standard cubic centimeters per minute (seem) and 50 cm, respectively. The X-ray diffraction (XRD) data revealed the GaN to be single phase with a = 3.1891 Å, c = 5.1855 Å, in space group P63mc, Z=2 and Dx =6.089 g cm−3. Scanning electron microscopy revealed a particle size distribution in the crushed material between 1 and 5 μm with most of the particles being ≍1 μm.Keywords
This publication has 2 references indexed in Scilit:
- FN: A criterion for rating powder diffraction patterns and evaluating the reliability of powder-pattern indexingJournal of Applied Crystallography, 1979
- Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und MetallnitrideZeitschrift für anorganische und allgemeine Chemie, 1938