Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model
- 1 January 1992
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Tight-binding description for the bound electronic states of isolated single and paired native defects in β-SiCPhysical Review B, 1991
- Energy Band Structure and Optical Properties of Wurtzite‐Structure Silicon Carbide CrystalsPhysica Status Solidi (b), 1990
- Electronic-structure study of the (110) inversion domain boundary in SiCPhysical Review B, 1990
- Calculated ground-state properties of silicon carbideJournal of Physics C: Solid State Physics, 1986
- Electronic structure of III-V semiconductors and alloys using simple orbitalsPhysical Review B, 1980
- Electronic structure and optical properties of-SiCPhysical Review B, 1975
- Energy Band Structures of Four Polytypes of Silicon Carbide Calculated with the Empirical Pseudopotential MethodPhysica Status Solidi (b), 1970
- Optical Absorption in-Type Cubic SiCPhysical Review B, 1969
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964