The influence of hydrostatic pressure on the formation of a donor superlattice in HgSe:Fe
- 1 April 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (4) , 293-295
- https://doi.org/10.1088/0268-1242/4/4/034
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Reduction of charge-center scattering rate inSePhysical Review B, 1987
- Formation of a superlattice of ionized resonant donors or acceptors in semiconductorsSolid State Communications, 1986
- Location of the Fe2+(3d6) donor in the band structure of mixed crystals Hg1-vCdvSeJournal of Physics C: Solid State Physics, 1986
- Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor HeterojunctionsPhysical Review Letters, 1985
- Electron scattering in HgSeJournal of Physics and Chemistry of Solids, 1978