Explosive crystallization in silicon

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Abstract
A survey of the possible autocatalytic crystallization processes called explosive crystallization in liquid and solid states is given. The explosive liquid‐phase epitaxy with laterally moving coupled interfaces of melting and crystallization in amorphous silicon layers on insulators is investigated by the use of an experimental equipment consisting of three synchronized lasers supplying the temperature pulses for ignition, spreading, and stopping of the explosive front. The velocity of this explosive crystallization front measured by use of time‐resolved reflectivity of a test beam is compared with the results of model calculations. The results are in good agreement. The crystal structure was investigated by optical and transmission electron micrography and represents crystalline laminae grown preferentially in the 〈110〉 direction over a distance of about 100 μm. Areas of some millimeters in diameter can be crystallized by this method.