High critical current density NbN/AlN/NbN tunnel junctions fabricated on ambient temperature MgO substrates
- 11 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (15) , 2034-2036
- https://doi.org/10.1063/1.111730
Abstract
NbN/AlN/NbN tunnel junctions are fabricated at ambient temperature on MgO substrates, and a critical current density of 8 kA/cm2 is obtained in junctions with 1.5–nm–thick AlN barriers. Even though the NbN/AlN/NbN trilayers are deposited without intentional heating, the junctions show a large gap voltage (Vg=5 mV), sharp quasiparticle current rise (ΔVg=0.16 mV), and small subgap leakage current (Vm=25 mV and Rsg/RN=9). This report shows that high-quality NbN/AlN/NbN tunnel junctions can be made at ambient substrate temperature.Keywords
This publication has 14 references indexed in Scilit:
- Fabrication of NbN/AlN superconducting multilayersJournal of Applied Physics, 1987
- Temperature-dependent properties of niobium nitride Josephson tunnel junctionsIEEE Transactions on Magnetics, 1987
- Processing of all-NbN tunnel junction series arraysIEEE Transactions on Magnetics, 1987
- Niobium nitride Josephson tunnel junctions with magnesium oxide barriersApplied Physics Letters, 1985
- All Niobium Nitride Josephson Junction with Hydrogenated Amorphous Silicon Barrier and its Application to the Logic CircuitJapanese Journal of Applied Physics, 1984
- All refractory Josephson tunnel junctions fabricated by reactive ion etchingIEEE Transactions on Magnetics, 1983
- The temperature variation of the dielectric constant of ’’pure’’ CaF2, SrF2, BaF2, and MgOJournal of Applied Physics, 1979
- Optical properties of AlN epitaxial thin films in the vacuum ultraviolet regionJournal of Applied Physics, 1979
- Dielectric Properties of Reactively Sputtered Films of Aluminum NitrideJournal of Vacuum Science and Technology, 1969
- Fundamental Optical Absorption in Magnesium OxidePhysical Review B, 1958