Consistent model for short-channel nMOSFET post-hard-breakdown characteristics

13 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 121-122
https://doi.org/10.1109/vlsit.2001.934979

Abstract

We show that dissimilar post-hard-breakdown nFET characteristics can be consistently explained by the location of a constant-size breakdown path. A physically based model and an equivalent circuit for a hard-broken nFET are given.

Keywords

MOSFET CIRCUITS
FETS
ELECTRIC BREAKDOWN
EQUIVALENT CIRCUITS
ROENTGENIUM
ELECTRONS
PERFORMANCE ANALYSIS
ANALYTICAL MODELS
LENGTH MEASUREMENT
DOPING

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