YAG photoluminescence of GaAs : Cr
Open Access
- 1 January 1980
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 15 (3) , 671-674
- https://doi.org/10.1051/rphysap:01980001503067100
Abstract
We have performed photoluminescence experiments, using two excitation sources : a YAG laser and a krypton laser, on a series of Chromium doped GaAs samples. The carrier concentration of the samples ranges from 1018 (n-type) to p-type (lightly doped). Three bands of photoluminescence at 0.57 eV, 0.61 eV and 0.839 eV are associated with Chromium. Their respective variations with excitation source and Fermi level position are reported. A tentative explanation in terms of the Configurational-Coordinate model for the (Cr 3+-Cr2+) centre is presentedKeywords
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