Semiconducting Properties of Inorganic Amorphous Materials
- 1 May 1961
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (5) , 950-954
- https://doi.org/10.1063/1.1736139
Abstract
Ten compositions were prepared in the systems As:Se:Te and As:S:Te. Nine of these compositions were amorphous in structure. The resistivities and Seebeck coefficients of these materials were measured as functions of temperature. The resistivity varied exponentially with temperature, while the Seebeck coefficient varied linearly. At 298°K, the resistivity values for the amorphous samples ranged from 4.7×104−2.5×1013 ohm-cm, while the Seebeck coefficient values ranged from 830–1625 μv/°K (p type). At any temperature, the resistivity decreased with increase in tellurium content. For the amorphous materials, the thermal conductivity values ranged from 2.4–4.4 mw/cm-°K.This publication has 1 reference indexed in Scilit:
- Low‐Melting Inorganic Glasses with High Melt Fluidities Below 400°C.Journal of the American Ceramic Society, 1959