Ge island formation on Si(111) in solid phase epitaxy studied by medium-energy ion scattering
- 1 March 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (2) , 387-389
- https://doi.org/10.1116/1.587951
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