Hot carrier effect on CMOS RF amplifiers
- 16 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper, for the first time, investigates hot carrier (HC) effects on RF power amplifiers in 0.16 /spl mu/m CMOS technology. The 0.16 /spl mu/m nMOSFET devices are stressed, and aged device parameters are extracted experimentally. Those aged device parameters are used to evaluate HC effects on a CMOS class AB RF amplifier working at 2.45 GHz for wireless communications. It is found that both output power and the power efficiency are degraded significantly.Keywords
This publication has 2 references indexed in Scilit:
- CMOS RF and DC Reliability Subject to Hot Carrier Stress and Oxide Soft BreakdownIEEE Transactions on Device and Materials Reliability, 2004
- Hot-carrier and soft-breakdown effects on VCO performanceIEEE Transactions on Microwave Theory and Techniques, 2002