Semi-insulating layers of GaAs by oxygen implantation
- 1 June 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (6) , 2532-2536
- https://doi.org/10.1063/1.322970
Abstract
High‐energy oxygen ions (400 keV <ET?800 °C).This publication has 9 references indexed in Scilit:
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- Analysis of Doping Anomalies in GaAs by Means of a Silicon-Oxygen Complex ModelJournal of Applied Physics, 1972
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