Contrast in the electron-beam lithography of substituted aromatic homopolymers and copolymers

Publisher Website
Google Scholar
Abstract
The lithographic characteristics of homopolymers and copolymers of substituted styrenes have been determined by electron lithography and compared to polystyrene, which is used as a standard for high contrast among negative resists. Homopolymers, as well as copolymers with glycidyl methacrylate, can be almost equal in contrast to the standard. They are more sensitive than it by at least an order of magnitude. For the homopolymers, the order of contrast among the styrene-substituents is hydrogen?methyl≳chloro∠chloromethy. For copolymers, the order is hydrogen≳chloromethyl≳methyl≳chloro. γ-values, although a familiar index of contrast and an adequate one when comparing families of materials with similar molecular weight distributions, ignore material variations that are significant in thick relief lithography. Preliminary, patterned exposures of three of these substituted styrenes are compared; poly(3-chlorostyrene), poly(vinylbenzyl chloride-co-glycidyl methacrylate). The limiting feature for each was a 2 μm gap of 0.7 μm final thickness. Better resolution is obtained with different features.

This publication has 0 references indexed in Scilit: