13 μm wide stripe c.w. GaAs/GaAlAs d.h. lasers linear to more than 10 mW
- 16 March 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (6) , 172-174
- https://doi.org/10.1049/el:19780114
Abstract
By using a very uniform device structure it has been possible to fabricate stripe contact d.h. GaAs/GaAlAs injection lasers with linear continuous output power exceeding 10 mW from one facet independent of stripe width in the range 10–14 μm. These results predict that there is no fundamental mechanism that gives a nonlinearity at a few milliwatts output power which could explain earlier published results, and that increased maximum linear output power could be achieved by further improving the uniformity of the device structure.Keywords
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