Spatial variation of lifetime distributions due to inert ion damage from low- and room-temperature implantation

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Abstract
The lifetime depth distribution in silicon due to Ar ion implantation prior to annealing has been measured. The lifetime is profiled by the quantitative electron-beam-induced current technique (QEBIC). For silicon with high P-doping levels (≳1018 cm−3) and or high oxygen content the lifetime distribution is essentially Gaussian with an exponential tail of slope <0.03 μm. For lightly doped and low oxygen content <111≳ and <100≳ float zone silicon the slope is much larger and extended beyond 0.45 μm for Ar ion fluences of 1012 cm−2. It is suggested that these deep defect depths are due to the room temperature diffusion of vacancies and the formation of V–O or V–P complexes.

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