Simple defect production and annealing processes during pulsed irradiation were investigated. Exponential decay to fixed sinks and bimolecular recombination were handled analytically but computer calculations were needed when both modes of annealing were operative simultaneously. The defect concentrations reach steady state after a large number of pulse cycles and these steady state values were compared with the steady state values produced during continuous irradiation using the time average production rate. The maximum defect concentrations, attained at the end of the irradiation pulse, are always higher than those produced by the comparable continuous irradiation. The opposite is the case for the minimum concentrations reached at the end of the annealing pulse. The defect concentrations averaged over the pulse cycle are generally lower, while the averaged squares of the concentrations are higher than those produced by the comparable continuous irradiation.