Energy Losses and Mean Free Paths of Electrons in Silicon Dioxide
- 1 December 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 4131-4136
- https://doi.org/10.1109/tns.1981.4335688
Abstract
Theoretical models and calculations are combined with experimental optical data to determine a model energy-loss function for SiO2. Sum-rule checks and comparisons with experimental information are made to insure overall consistency of the model. The model energy-loss function is employed to calculate electron inelastic mean free paths and stopping powers for electrons with energies 4335688 10 keV in SiO2.Keywords
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