Short-time annealing of as-grown p-CdTe wafers
- 1 September 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (9) , 1713-1718
- https://doi.org/10.1088/0268-1242/9/9/022
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Fabrication and Characteristics of a Submillimeter Detector Element Formed on a CdTe Single-Crystal Wafer as a Multichannel Detector Array Applicable to Diagnostic Imaging with Energy InformationJapanese Journal of Applied Physics, 1993
- Evolution of Transport Properties along a Semi-Insulating CdTe Crystal Grown by Vertical Gradient Freeze MethodJapanese Journal of Applied Physics, 1992
- Effect of vibrational stirring on the quality of Bridgman-grown CdTeJournal of Crystal Growth, 1990
- Cdte and CdZnTe crystal growth by horizontal bridgman techniqueJournal of Crystal Growth, 1990
- Development of two new M-π-n CdTe sensorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- Crystal growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman processJournal of Crystal Growth, 1988
- Electrical and optical properties of Au in cadmium tellurideJournal of Applied Physics, 1984
- Acceptor states in CdTe and comparison with ZnTe. General trendsPhysical Review B, 1984
- Photoluminescence studies in N, P, As implanted cadmium tellurideSolid State Communications, 1983
- Shallow Acceptors in Cadmium TelluridePhysica Status Solidi (b), 1982