Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner

1 January 2006

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 01631918,p. 1-4
https://doi.org/10.1109/iedm.2006.346814

Abstract

A novel strained-SiGe n-channel field-effect transistor (nFET) featuring silicon-carbon (Si _0.99 C _0.01 ) source/drain (S/D) stressors and tensile stress nitride (SiN) liner is demonstrated for the first time. The silicon-carbon Si _1-y C _y , material is pseudomorphically grown by selective epitaxy and the carbon mole fraction y incorporated is 1%. Si _0.99 C _0.01 S/D was employed to induce uniaxial tensile strain in the SiGe channel, leading to enhancement in electron mobility. Devices with gate length L _G down to 50 nm were fabricated. Up to 55% higher saturation drive current I _d,sat was achieved in the strained-SGOI nFETs over control devices. In addition, the incorporation of a tensile stress SiN liner improves I _d,sat by an additional 15%

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