Ionization of SiO2 by Heavy Charged Particles
Open Access
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 3975-3980
- https://doi.org/10.1109/tns.1981.4335658
Abstract
Highly ionizing heavy charged particles generate significant charge as they pass through the thin thermally grown gate oxide of a MOSFET device. The amount of charge created by an alpha particle and proton is calculated and the yield of charqes which escape initial recombination is measured. The experimental results are shown to agree with a charge recombination model where an ionization track radius of 30-40 Å is assumed. Finally, implications of the findings for single charged particle effects in submicron dimension devices are discussed.Keywords
This publication has 8 references indexed in Scilit:
- Charge Yield and Dose Effects in MOS Capacitors at 80 KIEEE Transactions on Nuclear Science, 1976
- Unified Model of Damage Annealing in CMOS, from Freeze-In to Transient AnnealingIEEE Transactions on Nuclear Science, 1975
- Effects of ionizing radiation on short-channel thin-Oxide (200-Å) MOSFET'sIEEE Transactions on Electron Devices, 1975
- Electron−hole pair creation energy in SiO2Applied Physics Letters, 1975
- Hole and electron transport in SiO2 filmsJournal of Applied Physics, 1974
- Charge-Carrier Transport Phenomena in Amorphous Si: Direct Measurement of the Drift Mobility and LifetimePhysical Review Letters, 1973
- Ionization by alpha-particles in liquids at low temperatures: 1. Measurements in liquid nitrogen and liquid hydrogenPhysica, 1948
- Zur Theorie der Ionisation in KolonnenAnnalen der Physik, 1913