Quantum dot infrared photodetectors in new material systems
- 20 March 2000
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 7 (1-2) , 139-145
- https://doi.org/10.1016/s1386-9477(99)00266-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum DotsJapanese Journal of Applied Physics, 1999
- Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)Applied Physics Letters, 1999
- Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)Applied Physics Letters, 1998
- Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectorsApplied Physics Letters, 1998
- Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectorsApplied Physics Letters, 1998
- Measurement of electron capture probability in quantum wellPhysica E: Low-dimensional Systems and Nanostructures, 1998
- Multiexciton Spectroscopy of a Single Self-Assembled Quantum DotPhysical Review Letters, 1998