Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators, and switches
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 41 (12) , 2295-2302
- https://doi.org/10.1109/22.260720
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A GaAs monolithic pin SPDT switch for 2-18 GHz applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 100 MHz to 20 GHz monolithic single-pole, two-, three-, and four-throw GaAs PIN diode switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- X-band HBT VCO with high-efficiency CB buffer amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A PIN diode switch that operates at 100 watts CW at C-bandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- GaAs HBT MMIC broadband amplifiers from DC to 20 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002