The development of a gate assisted turn-off thyristor for use in high frequency applications
- 1 March 1974
- journal article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 36 (3) , 399-416
- https://doi.org/10.1080/00207217408900420
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Films of Silicon Nitride-Silicon Dioxide MixturesJournal of the Electrochemical Society, 1968
- Gate turn-off in p-n-p-n devicesIEEE Transactions on Electron Devices, 1966
- Properties of gold in siliconSolid-State Electronics, 1966
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966