Analysis of drain breakdown voltage in SOI n -channel MOSFETs

23 November 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (24) , 1640-1641
https://doi.org/10.1049/el:19891099

Abstract

The reduction of drain breakdown voltage in SOI n-MOSFETs with floating substrate is related to the presence of a parasitic NPN bipolar structure, the base of which is the floating body of the device. Reduction of breakdown voltage (compared to the case where a body contact is used) is shown to be dependent on both channel length and minority carrier lifetime in the SOI material. Conversely, it is shown that mere measurement of MOSFET breakdown voltages can be used to extract the minority carrier lifetime in the SOI material.

Keywords

SOI MATERIAL
MOSFETS
SEMICONDUCTOR
DRAIN BREAKDOWN VOLTAGE
PARASITIC N-P-N BIPOLAR STRUCTURE
MINORITY CARRIER LIFETIME
CHANNEL LENGTH
FLOATING SUBSTRATE
N-CHANNEL

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