Nonuniform quantum well infrared photodetectors
- 1 January 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (1) , 522-525
- https://doi.org/10.1063/1.371893
Abstract
A nonuniform quantum well infrared photodetector(QWIP) structure is proposed. By changing the doping concentration and barrier width of each quantum well, the electric field distribution can be tailored. The nonuniform QWIPs show excellent performance compared with conventional uniform structures. The dark current is about an order of magnitude lower and the background limited temperature increases to 77 K. A detectivity of 2.0×10 10 cm Hz 1/2 / W and a responsivity of 0.25 A/W at 8.2 μm have been obtained for these devices. A simple picture of electric field distribution within the structure is described to explain the results.This publication has 9 references indexed in Scilit:
- Long-wavelength 640×486 GaAs-AlGaAs quantum well infrared photodetector snap-shot cameraIEEE Transactions on Electron Devices, 1998
- A self-consistent model for quantum well infrared photodetectorsJournal of Applied Physics, 1996
- Contact and distributed effects in quantum well infrared photodetectorsApplied Physics Letters, 1995
- Quantum-well infrared photodetectorsJournal of Applied Physics, 1993
- Unipolar avalanche multiplication phenomenon in multiquantum well structuresApplied Physics Letters, 1993
- Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectorsJournal of Applied Physics, 1992
- Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunnelingApplied Physics Letters, 1987
- New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band-edge discontinuityApplied Physics Letters, 1986
- Impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructuresJournal of Applied Physics, 1986