Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals
- 1 October 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (10A) , L859
- https://doi.org/10.1143/jjap.25.l859
Abstract
Optical absorption of silicon crystals involving nitrogen and oxygen is investigated at low temperature. New absorption lines are found and attributed to seven defect levels that act as shallow donors. The characteristics of the absorption lines are well described by the effective mass approximation. Five among these seven levels are related to complexes of nitrogen and oxygen atoms.Keywords
This publication has 13 references indexed in Scilit:
- Nature of thermal donors in silicon crystalsPhysica Status Solidi (a), 1984
- Infrared spectroscopic study of thermal donors in Czochralski-grown silicon developed at 450°CMaterials Letters, 1983
- Interaction of dislocations with impurities in silicon crystals studied byin situX-ray topographyPhilosophical Magazine A, 1983
- Deep Levels Associated with Nitrogen in SiliconJapanese Journal of Applied Physics, 1982
- Oxygen diffusion and thermal donor formation in siliconApplied Physics A, 1982
- Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductorsReports on Progress in Physics, 1981
- Jahn-Teller-Distorted Nitrogen Donor in Laser-Annealed SiliconPhysical Review Letters, 1980
- The Origin of the Difference in the Mechanical Strengths of Czochralski-Grown Silicon and Float-Zone-Grown SiliconJapanese Journal of Applied Physics, 1980
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958