Extraction of Schottky diode parameters from forward current-voltage characteristics
- 14 July 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (2) , 85-87
- https://doi.org/10.1063/1.97359
Abstract
It is shown that by using the forward current density‐voltage (J‐V) characteristics of a Schottky diode, a plot of d(V)/d(ln J) vs J and a plot of the function H(J) vs J, where H(J)≡V−n(kT/q)ln(J/A**T2), will each give a straight line. The ideality factor n, the barrier height φB, and the series resistance R of the Schottky diode can be determined with one single I‐V measurement. This procedure has been used successfully to study thermal annealing effects of W/GaAs Schottky contacts.Keywords
This publication has 2 references indexed in Scilit:
- Study of forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1985
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979