Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method

This publication has 20 references indexed in Scilit:

• Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties
  IEEE Transactions on Electron Devices, 1999
• Step structures and dislocations of SiC single crystals grown by modified Lely method
  Journal of Crystal Growth, 1998
• Silicon Carbide High Frequency Devices
  Materials Science Forum, 1998
• High Voltage Silicon Carbide Devices
  MRS Proceedings, 1998
• Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide
  MRS Proceedings, 1998
• Investigation Of Microplasma Breakdown In 4H Silicon Carbide
  MRS Proceedings, 1998
• Silicon Carbide And Gallium Nitride Rf Power Devices
  MRS Proceedings, 1997
• Imaging Of Micropipes In Silicon Carbide Under High Field Stress
  MRS Proceedings, 1996
• SiC Power Devices
  MRS Proceedings, 1996
• Comparison of 6H-SiC, 3C-SiC, and Si for power devices
  IEEE Transactions on Electron Devices, 1993