High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 1005-1008
• https://doi.org/10.4028/www.scientific.net/msf.264-268.1005

Abstract

Keywords

• DMOS
• LDMOS
• POWER MOSFET
• RESURF
• SEMICONDUCTOR ON INSULATOR
• SOI