Enhancement of radiative recombination in Si-based quantum wells with neighboring confinement structure

24 July 1995

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 67 (4) , 524-526
https://doi.org/10.1063/1.115176

Abstract

Intense photoluminescence (PL) was observed from a new class of Si-based quantum well structures (QWs), that is, neighboring confinement structure (NCS). NCS consists of a single pair of tensile-strained-Si layer and a compressive-strained Si1−yGey layer sandwiched by completely relaxed Si1−xGex ( layers. In spite of the indirect band structure in real and k spaces, radiative recombination was enhanced compared with not only type-II strained-Si/relaxed-Si1−xGex QWs but also type-I strained-Si1−yGey/relaxed-Si1−xGex QWs. PL without phonon participation was found to dominate the spectrum possibly due to the effective carrier confinement for both electrons and holes. Quantum confinement effect was clearly observed by varying the well width, showing that the expected band alignment is realized.

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