Influence of hot filament-d.c. plasma co-enhancement on low pressure diamond synthesis
- 25 September 1992
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 1 (9) , 955-962
- https://doi.org/10.1016/0925-9635(92)90117-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Aspects of diamond deposition by anomalous pulsed d.c. glow-discharge-activated chemical vapor depositionSurface and Coatings Technology, 1991
- Clarification of the effect of bias in the hot filament processSurface and Coatings Technology, 1991
- Carburization of tungsten and tantalum filaments during low-pressure diamond depositionSurface and Coatings Technology, 1991
- Towards a general concept of diamond chemical vapour depositionDiamond and Related Materials, 1991
- Activity of tungsten and rhenium filaments in CH4/H2 and C2H2/H2 mixtures: Importance for diamond CVDJournal of Materials Research, 1990
- Electron microscopic characterization of diamond films grown on Si by bias-controlled chemical vapor depositionJournal of Materials Research, 1990
- Bias-controlled chemical vapor deposition of diamond thin filmsApplied Physics Letters, 1990
- Growth of diamond thin films by electron-assisted chemical vapour deposition and their characterizationThin Solid Films, 1986
- Growth of diamond particles from methane-hydrogen gasJournal of Materials Science, 1982