Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and gettering
- 13 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (7) , 611-613
- https://doi.org/10.1063/1.100894
Abstract
The combined use of rapid thermal annealing and deep level transient spectroscopy is described as an efficient means to reveal chromium profiles in silicon wafer after various thermal treatments. The proposed method has been successfully applied to observe the depletion of chromium atoms at the near-surface region of intentionally contaminated Czochralski-grown silicon reslting from a conventional three-step gettering cycle.Keywords
This publication has 2 references indexed in Scilit:
- Chromium and chromium-boron pairs in siliconApplied Physics A, 1983
- Transition metals in siliconApplied Physics A, 1983