Hot-electron cooling and hot-phonon generation with collision broadening

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Abstract
Hot-electron cooling and the hot–longitudinal-optical-phonon generation is studied theoretically in GaAs and InP. The electron-energy collision broadening and the electronic screening in the dynamical random-phase approximation are taken into account. These two mechanisms together are shown to lead to an enhancement of the electron cooling rate in a certain range of the electronic densities. Support for the recent interpretation of the hot-electron cooling measurement by Hohenester et al. in terms of the collision broadening is provided. Also, an alternative interpretation of the earlier Raman measurements of the hot-phonon population in the long-wavelength region of the Brillouin zone is suggested, based on the above mechanism.